SAMSUNG 990 EVO 1TB PCI Express 4.0 V-NAND TLC NVMe Internal Solid State Drive
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SSD
SAMSUNG 990 EVO 1TB PCI Express 4.0 V-NAND TLC NVMe Internal Solid State Drive
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SAMSUNG 990 EVO 1TB PCI Express 4.0 V-NAND TLC NVMe Internal Solid State Drive
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Read Speed
5GB/s
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Write Speed
4.2GB/s
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Interface
PCI Express 4.0
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Form Factor
M.2
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SSD Capacity
1TB
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Description
Specifications
990 EVO 5.0 NVMe™ SSD 1TB
MZ-V9E1T0B
Features:
- Load game and save files in a flash with read and write speeds of up to 5,000/4,200 MB/s.
- Save the power for your performance. Get power efficiency all while experiencing up to 70% improved performance per watt over the 970 EVO Plus.
- Ramp things up without overheating the system. Samsung’s fine-tuned controller and heat spreading label deliver effective thermal control to avoid performance drops mid-project.
Specifications:
General
- Interface PCIe® 4.0 x4 / 5.0 x2, NVMe2.0
- Form Factor M.2 (2280)
Performance
- Seq. Read/Write (MB/s) Up to 5,000/4,200 performance may vary based on system hardware & configuration
- Ran. Read/Write (IOPS ,QD1) Up to 20K/90K performance may vary based on system hardware & configuration
- Ran. Read/Write (IOPS ,QD32) Up to 680K/800K performance may vary based on system hardware & configuration
Power
- Active (Read/Write) 4.9W / 4.5W
- Device Sleep (L1.2) Typical 60mW / Typical 5mW
- Data Encryption Class 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667)
- Total Bytes Written (TBW) 600
Storage
Hardware
- NAND Samsung V-NAND TLC
- Controller In-House Controller
- Cache Memory HMB (Host Memory Buffer)
Warranty
- Product Five (5) Year Limited Warranty
| SSD capacity | 1 TB |
| SSD form factor | M.2 |
| Interface | PCI Express 4.0 |
| NVMe | Yes |
| NVMe version | 2.0 |
| Memory type | V-NAND TLC |
| Component for | PC |
| Hardware encryption | Yes |
| Security algorithms | 256-bit AES |
| M.2 SSD size | 2280 (22 x 80 mm) |
| Read speed | 5000 MB/s |
| Write speed | 4200 MB/s |
| Random read (4KB) | 680000 IOPS |
| Random write (4KB) | 800000 IOPS |
| PCI Express interface data lanes | x4 |
| DevSlp (device sleep) support | Yes |
| PCI Express CEM revision | 4.0 |
| S.M.A.R.T. support | Yes |
| TRIM support | Yes |
| Mean time between failures (MTBF) | 1500000 h |
| TBW rating | 600 |
| Operating voltage | 3.3 V |
| Power consumption (read) | 4.9 W |
| Power consumption (write) | 4.5 W |
| Power consumption (sleep) | 0.005 W |
| Power consumption (idle) | 0.06 W |
| Power consumption DevSlp (device sleep) | 5 mW |
| Width | 80 mm |
| Depth | 2.38 mm |
| Height | 22 mm |
| Weight | 9 g |
| Package type | Box |
| Operating temperature (T-T) | 0 - 70 °C |
| Storage temperature (T-T) | -40 - 85 °C |
| Operating relative humidity (H-H) | 5 - 95% |
| Storage relative humidity (H-H) | 5 - 95% |
| Non-operating vibration | 20 G |
| Operating shock | 1500 G |
| Non-operating shock | 1500 G |
| Warranty period | 5 year(s) |
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